| 发明名称 |
Indium oxide/n-silicon heterojunction solar cells |
| 摘要 |
A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.
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| 申请公布号 |
US4366335(A) |
申请公布日期 |
1982.12.28 |
| 申请号 |
US19810258935 |
申请日期 |
1981.04.30 |
| 申请人 |
EXXON RESEARCH AND ENGINEERING CO. |
发明人 |
FENG, TOM;GHOSH, AMAL K. |
| 分类号 |
H01L31/062;(IPC1-7):H01L31/06 |
主分类号 |
H01L31/062 |
| 代理机构 |
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| 地址 |
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