| 摘要 |
PURPOSE:To improve the degree of integration and prevent the generation of a soft error due to radioactive particles such as alpha particles by capacitance formed together with a conductor into a trench shaped to the surface of a semiconductor substrate and a thin-film transistor, which connects a substrate region to the semiconductor substrate and one conductive electrode of which is connected to the conductor. CONSTITUTION:A semiconductor memory cell is constituted of a P-type silicon crystal substrate 101, an N-type buried region 102, a trench forming section 103, an N-type region 104, an insulator film 105, a dielectric 106, a conductor 107, a gate oxide film 108, silicon films 109, 110, a conductor 111, a contact hole 112, P-type silicon 113, a P-type region 114, insulator films 115-117 for dielectric isolation, and the boundary 118 of an active region and an element isolation region. 102, 104, 105 and 106 organize cell capacitance, and 110, 107, 108 and 109 construct an N-type channel thin-film MOSFET. The N-type regions 109 are used as conductive electrodes, and one is connected to the conductor 111 employed as a bit line and the other to the conductor 106 used as a memory node respectively. |
