| 摘要 |
PURPOSE:To obtain the detecting element operating at high speed by diffusing and forming a plurality of reverse conduction type striped regions functioning as charge recombination regions to a semi-insulating or one conduction type plural semiconductor substrate, growing a plural semiconductor layer onto the striped regions again and coating the layer with electrodes partitioned through an insulating film. CONSTITUTION:A plurality of N<+> type striped regions 10, which serve as a kind of buried collector regions and impurity concentration thereof is 10<6>-10<17>cm<-3>, are diffused and shaped to the surface layer of a semi-insulating or P type CdTe substrate 9, a multi-element semiconductor layer 12 consisting of HgCdTe is grown on the whole surface containing the regions 10 in approximately 5mum thickness, and the layer 12 is coated with an insulating film 5 made of ZnS, etc. Ni electrodes 6, edges thereof cross stripes, are partitioned in 100Angstrom thickness and formed so that infrared rays are easy to transmit while making one of the regions 10 contain, and the regions 10 are grounded previously. Accordingly, the regions 10 are used as the recombination regions of electric charges, the speed of the extinction and recombination of carriers is accelerated remarkably, and the element operating at high speed is obtained. |
