| 摘要 |
PURPOSE:To enable the title device to be driven by a DC power source by providing a third electrode sharing the tunnel barrier layer, thereby performing a non-latching switching operation. CONSTITUTION:There are provided a barrier layer 3 which can cause a tunnel current to flow between two superconducting films 2, 4 and an electrode 6 capable of applying an electric field to the barrier layer 3, and the barrier height of the tunnel barrier layer 3 is controlled by applying a voltage to the electrode 6 in order to make the magnitude of the tunnel current variable. That is, the barrier height is adjusted by applying an electric field to the barrier layer 3 thereby to change the carrier density within the barrier layer 3. With this, the tunnel resistance of the crystal grain boundary becomes variable, so a titled device can be provided with the switching characteristics as a three- terminal device like a previous semiconductor transistor and thus can be operat ed with a DC power source.
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