摘要 |
PURPOSE:To manufacture a scintillator with an improved yeild through reduction in chipping-off and crack, by a method wherein a rectangular parallelopiped single crystal of ZnWO4 and CdWO4, or the mixture composition of both is cut so that it has a given plane of cleaveage and 4 rectangular side faces. CONSTITUTION:In case a scintillator is formed with a rectangular parallelopiped single crystal of ZnWO4 and CdWO4, or the mixture composition of both, a face 1, making contact with a photoelectric coverting element, is formed into a cloven plane (010) which is easy to grind it into a mirror surface. In case it is cut by a diamond cutter in order to decrease a crack 2 produced in the sides due to cleavage, the plane (010) of the single crystal is cut in cleavage, and provided the plane serves as the surface 1, a short side is cut in a direction inclining toward parallel with a plane (102) so that normal lines of 4 sides perpendicular to the surface 1 are situated within a region A ranging within 30 deg. from (100) axis (a) and (001) axis (c). Then, after a block, in which a long side is cut in a direction of arrow marks, is cut out, a (110) side is cloven in a thickness of about 3mm., a rectangular parallelopiped for scintillator, which measures 25X 5X3mm.<3>, is cut out, and the (110) side is ground to obtain a sciintllator, which is prevented from the production of crack or cleavage crack 2, with an improved yield. |