| 摘要 |
PURPOSE:To obtain the structure of a solder electrode which has high strength and high reliability, by depositing a solder bump part so as to cover the entire surface of a topmost hard metal film of laminated ground metal layers for the solder on the wiring on the surface of an insulating layer, and performing the like. CONSTITUTION:On the surface of a semiconductor substrate 1, e.g. an SiO2 film 2 and a phosphorus silicate glass film 3 are formed. A to film 5, a Cu film 6, and an Ni film 7, which are connected to an aluminum wiring 4 which is provided on said glass film 3 through a contact hole in an insulating film 10, are formed as the ground metal layers. The Ni film 7 is formed so that it is smaller than the intermediate metal film Cu 6. The solder bump part 8 formed thereon covers the entire surface of the Ni film 7 and directly contacts with the intermediate metal film 6. In this structure, mechanical shocks and the like applied on the electrode is received mainly by the soft solder bump 8, and absorbed by its deformation. Therefore, the stress at this time does not cause the separation and the like in the phosphorus silicate glass film 3 under the electrode. |
