发明名称 |
SURFACE TREATMENT FOR LEAD FRAME FOR SEMICONDUCTOR |
摘要 |
PURPOSE:To form an inexpensive lead frame having high reliability by a method wherein a brazing material functioning at the time of thermally pressing a semiconductor element is previously provided as a solder plating layer on a lead frame for semiconductor and tin is deposited to the surface of the plating layer only by a displacement method. CONSTITUTION:An Ni plating layer 2 is formed on a lead frame substrate 1 and a P-Ni alloy plating layer 3 is formed on the layer 2. Furthermore, a solder plating layer 5 is formed on the semiconductor element section 4 of the lead frame and a tin displacement film 6 is formed on the layer 5. This improves the discoloration resistance of solder and stabilizes wettability. |
申请公布号 |
JPS57211763(A) |
申请公布日期 |
1982.12.25 |
申请号 |
JP19810097988 |
申请日期 |
1981.06.24 |
申请人 |
HITACHI DENSEN KK |
发明人 |
YAMAGISHI RIYOUZOU;YOSHIOKA OSAMU |
分类号 |
H01L21/52;H01L21/60;H01L23/495;H01L23/50 |
主分类号 |
H01L21/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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