发明名称 SURFACE TREATMENT FOR LEAD FRAME FOR SEMICONDUCTOR
摘要 PURPOSE:To form an inexpensive lead frame having high reliability by a method wherein a brazing material functioning at the time of thermally pressing a semiconductor element is previously provided as a solder plating layer on a lead frame for semiconductor and tin is deposited to the surface of the plating layer only by a displacement method. CONSTITUTION:An Ni plating layer 2 is formed on a lead frame substrate 1 and a P-Ni alloy plating layer 3 is formed on the layer 2. Furthermore, a solder plating layer 5 is formed on the semiconductor element section 4 of the lead frame and a tin displacement film 6 is formed on the layer 5. This improves the discoloration resistance of solder and stabilizes wettability.
申请公布号 JPS57211763(A) 申请公布日期 1982.12.25
申请号 JP19810097988 申请日期 1981.06.24
申请人 HITACHI DENSEN KK 发明人 YAMAGISHI RIYOUZOU;YOSHIOKA OSAMU
分类号 H01L21/52;H01L21/60;H01L23/495;H01L23/50 主分类号 H01L21/52
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