| 摘要 |
PURPOSE:To improve characteristics of the electrode or the wiring layer of the semiconductor device, by making the structure of a protecting film to be compound protecting films wherein an inorganic protecting film having excellent moisture resistance is made to be a ground material and an electrically stable organic protecting film is laminated thereon. CONSTITUTION:On one main surface of a silicon substrate 1, a wiring 2 comprising Al or Al including Si is provided. An SiO2 film 3 and a PIQ resin film 4 which constitute the compound protecting films are sequentially laminated on said wiring 2. The SiO2 film 3 has excellent moisture resistance but it is electrically unstable due to ionic material in the film. Meanwhile, the PIQ resin film 4 has excellent electric stability but its moisture resistance is poor. Defects of both films are compensated each other in this structure. |
