| 摘要 |
PURPOSE:To form a flat field oxidized film by forming a recess on a semiconductor substrate, convering an insulating film on the overall surface, burying by etching an insulating film in the recess, further covering an insulating film and uniformly etching the surface. CONSTITUTION:A thermally oxidized film 2 and an aluminum layer are covered on the surface of an Si substrate 1, and a region to become a field part is then etched, thereby forming a recess. Subsequently, ions are implanted for preventing an inversion to the recess, and a CVD SiO2 film 6 is covered in a sufficient thickness on the overall surface. Then, the film 6 is etched by using a selective etching method having an etching speed faster than the other part at the side surface, and is buried in the recess. At this time. a V-shaped groove 7 remains in the periphery of the recess. Thereafter, a CVD SiO2 film 8 is covered again on the overall surface, a resist 9 is covered on the surface, and ion etching is uniformly performed. Then, the film 8 is buried in the groove 7, thereby flattening the surface. |
