| 摘要 |
PURPOSE:To boost a signal line to be boosted at high speeds, by separating a boosting signal to the 1st boosting capacitor from a boosting signal to the 2nd boosting capacitor and increasing the level of the boosting signal to the 2nd boosting capacitor than that of a power supply voltage. CONSTITUTION:In an MOS transistor 20, the drain is connected to a node 21, the gate is connected to a power supply terminal 2a, the source is connected to an input terminal 5, and a boosting capacitor 23 is charged. The 1st boosting signal is inputted to an input terminal 22. One end of the capacitor 23 is connected to the node 21, another end is connected to the terminal 22 to increase the level of a boosting signal applied to a boosting capacitor 14 than the level of a power supply voltage. The 2nd boosting signal is inputted to an input terminal 24. Thus, a signal line 1 to be boosted can be boosted in a high speed. |
