| 摘要 |
PURPOSE:To boost a signal line to be boosted at high speeds, by providing a boosting gate circuit which increases the level of a gate voltage of an MOS transistor (TR) connecting the signal line to be boosted and a boosting capacitor than a power supply voltage before the boosting is done. CONSTITUTION:One end of a boosting capacitor 20 is connected to a node 21 and another end is connected to an input terminal 5, and the level of a node 13 is increased than a power supply voltage V. The drain of an MOS TR22 is connected to the node 13, the gate is connected to a node 9, the source is connected to the node 21 and a capacitor 20 is charged. In an MOS TR23, the drain is connected to the node 13, the gate and source are connected to the node 21 and the capacitor 20 and the node 13 are connected at the boost of the node 13. Further, the capacitor 20 and the MOS TRs 22 and 23 constitute a boosting gate circuit which increases the level of gate voltage of an MOS TR15 higher than the power supply voltage V before the signal line 1 is boosted. |
