SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PURPOSE:To prevent the production of a thyristor formed by an N type invertion of a substrate and to obtain a power IC strong against a damage by forming a ground terminal at the position isolated from a power transistor. CONSTITUTION:An upper stage power transistor Q1 connected to a power terminal VCC and a lower stage power transistor Q2 connected to a ground terminal GND are provided on a P<-> type Si substrate 1, and are connected in cascade, thereby forming an output stage of a power IC formed in a push-pull circuit. A contact P2 to a substrate formed separately from an electrode pad P1 becoming ground terminal formed on an insulating film of the surface of the semiconductor substrate 1 is provided at the position isolated as far as possible from the transistor Q1 at the power source side. The terminal P1 and the contact P2 are electrically connected by using an upper wire 7 made of aluminum or the like formed on the surface of the substrate.