| 摘要 |
PURPOSE:To prevent a corrosion and an improper insulation of a semiconductor device due to external atmosphere by covering the surfaces of the connecting parts of leads and a semiconductor part mounted on the leads with a silicon nitrided film layer and then sealing it with resin. CONSTITUTION:A semiconductor element 1 is mounted on a metal plate 2, is electrically connected via fine metal wires 3 to external leads 4, the surfaces are covered with a silicon nitride film layer 6, and the entirety is sealed with organic synthetic resin 5. In this manner, a corrosion and an improper insulation due to external atmosphere can be prevented. Aluminum or the like is formed on the surface of the silicon nitride film, thereby preventing the variation in the characteristics of the element due to external static electricity. |
