| 摘要 |
PURPOSE:To prevent curving of a film owing to the stress in the thickness direction of the formed film by controlling the temp. of the film to be vapor-deposited on a substrate and the temp. of substrate to below the elevated temp. by the radiation heat from vapor source for filming material. CONSTITUTION:In a physical vapor deposition or chemical vapor deposition method, the temp. of a substrate from the start of film formation until the end thereof is set at the temp. higher than the elevated temp. by the radiation heat from vapor sources for filming materials, the heat conducted from evaporating particles, etc., and the surface temps. of the substrate during film formation and the formed films are maintained at a constant or always dropping state from the start of the film formation until the end thereof, whereby the thermal expansion on the surface to be formed with the films is suppressed and the curving of the films owing to the differences in the stresses in the films formed when the temp. drops is prevented. The films having good fits to the substrate shapes are obtained by this and the films obtained by removing the substrate by etching are free from curling. |
