| 摘要 |
<p>In a semiconductor chip (12), there is arranged an integrated circuit with an npn transistor (10) and one diode (11). The diode (11) is connected to the collector of the transistor (10) through its cathode. The collector area of the transistor (10) is formed by a layer with an n- type conductivity (14). The base area of the transistor (10) is formed by a first p type conductivity area (16) and diffused in the collector area (14) while the transmitter area of the transistor (10) is formed by an n+ type conductivity area (17) diffused in the base area (16). The cathode of the diode (11) is formed by the n- collector area (14) of the transistor (10) while the anode of the diode (11) is formed by a second p type conductivity area (18) diffused in the collector area. Further, there is diffused, in the collector area (14) around the second area (18) having a p type conductivity, a third p type conductivity area (19) which forms a guard-ring. This area (19) is connected with the collector area (14) of the transistor (10) by a metallization (20).</p> |
