The switching device has a laminar structure comprising a bottom electrode, an insulating layer, an amorphous semiconductor and a top electrode. The insulating layer is made of polysilicon (3) and has a doped conduction channel (4) extending from the bottom electrode (2) to the amorphous semiconductor (5). A matching layer (8) is located at the boundaries between the amorphous semiconductor and the top and bottom electrodes (2,6) and prevents diffusion.
