Semiconductor device having a resistor region with an enhanced breakdown voltage.

摘要

A semiconductor device comprising in a semiconductor region (15 min ) of one conductivity type a resistor region (10) of opposite conductivity type having at least one convex, i.e. outwardly projecting corner (i-o), is for the purpose of improving the breakdown voltage, particularly in a high voltage IC, provided with at least one additional region (31-34) having the same conductivity type as said resistor region (10) and being juxtaposed to the or a respective convex corner at a distance that a space charge region expanding from said resistor region may reach said additional region preferably before avalanche breakdown occurs. The or each additional region may be formed simultaneously with said resistor region and may form a concave corner facing said convex corner.