| 摘要 |
PURPOSE:To increase resistance against dry etching and to improve resistance against gas plasma by a method wherein metal ions are injected into a resist pattern obtained through developing and then dry etching is performed to form a fine pattern. CONSTITUTION:A metal Cr film 2 is formed on a glass substrate 1. A resist 3 for exposure of an electron beam is coated thereon and thus obtained element is subject to prebaking. Then, the electron beam is irradiated in accordance with the desired pattern. Thereafter, a resist pattern 4 is attained through developing with a solution which consists of methyl isobutyl ketone and isopropanol in the ratio of 8 to 1. Subsequently, after removing the developing solution and drying, ions are injected into all the surface of the pattern 4. As a result, dry etching can be performed using a resist pattern 4a as a mask, which pattern 4a has been metamorphosed to have resistance against gas plasma, so that a metal thin film pattern 5 may be obtained. |
