| 摘要 |
PURPOSE:To accurately form a lateral p-n-p-n negative resistance diode in a mass production scale by employing two MIS-structure electrodes. CONSTITUTION:A p type semiconductor first region 9, an n type semiconductor second region 12, a p type semiconductor third region 11 and an n type semiconductor fourth region 10 are arranged in this sequence. The regions 9 and 12 form the first rectifying junction, the regions 12 and 11 form the second rectifying junction, and the regions 11 and 10 form the third rectifying junction. The first MIS-structure electrode 13 and the second MIS-structure electrode 14 are formed through a thin insulating film 15 forming an I layer of the MIS-structure electrode. Energizing electrodes 16, 17 and a protective insulating layer 18 are formed at both ends. |
