| 摘要 |
<p>PURPOSE:To improve the reliability of a semiconductor integrated circuit by employing different number of layers of surface protective films, thickness or material different to each other in response to a circuit element section and a wiring section. CONSTITUTION:In a semiconductor chip 1 having a power source pad 3, a grounding pad 4, metal wiring patterns 5, 6, an active element section 7 made of n-channel MOSFET, the surface protective film of the active element section 7 is formed in a two-layer structure of an SiO2 film 8 containing phosphorus and an Si3N4 film 1, and the surface protective film of the other part is formed on an Si3N4 film 2. The influence of Na<+> ions to the active element is eliminated, and invasion of water content is prevented by the Si3N4 film. An n-channel MOSFET and a bipolar transistor are formed on the same chip, or a protective film of two layer structure is formed in the n-channel MOS section even in a C-MOSFET, and a protective film of one-layer structure may be formed at the other section.</p> |
