| 摘要 |
PURPOSE:To permit formation of fine patterns by a method wherein a charged beam is irradiated upon the surface of a work in accordance with the desired pattern so as to form a metamorphic layer near the surface, and then the work is etched using the metamorpic layer as a mask. CONSTITUTION:An ion beam is irradiated upon the surface of a work 12 formed on a substrate 11 in accordance with the desired pattern so as to form a metamorphic layer 13 in the beam irradiated portion of the work 12. Then, the work 12 is etched using the metamorphic layer 13 as a mask, so that the work 12 is processed to have the desired pattern. At this time, the kind of irradiated ions is selected such that it can form a substance on the surface of the work, which substance has resistance against anisotropic etching subsequently applied. Acceleration voltage, an irradiation amount and other parameters of the ion beam are preset such that the irradiated ions are held on the surface of the work so as to form the metamorphic layer in that area. |
