| 摘要 |
PURPOSE:To improve both the yield and the reliability of a storage device, by relieving a defect caused when the storage device is produced as well as a fault caused by an external factor and when the storage device is active. CONSTITUTION:An address selecting circuit 1B in a storing circuit 15B has a trouble, and a row line having a row address of ''01'' is selected by both row address signals ''00'' and ''01''. In such case, both a storage cell having an address ''0000'' contained in a storing circuit 15A and a memory cell having an address ''0100'' contained in the circuit 15B are selcted at one time. In this case, a discriminating circuit 13B in the circuit 15B detects a fault selected double, and the output signal SCB is set in the selection mode of fault. Thus a data input/output circuit group 14B is not started. Accordingly the writing/reading of data is carried out only to a cell having an address ''0000'' contained in the circuit 15A. |
