| 摘要 |
PURPOSE:To largely reduce the area of an electrode section to be connected by arranging a conductive layer having etching speed different to the same etchant from upper and lower wiring layers on the surface of connecting part of the upper and lower wiring layers. CONSTITUTION:A wiring layer of the first layer made of an aluminum film 10 having approx. 1mum of thickness and its connecting electrode are formed on an SiO2 film 2 formed on a semiconductor substrate 1. Then, a wiring layer of the second layer and its connecting electrode are composed through an SiO2 film 4 formed by a CVD method of a Ti-W film 11 having approx. 1,000Angstrom as a lower layer and an aluminum film 12 having approx. 1.2mum of thickness as an upper layer. By employing a procedure described as such, in the case of patterning and ethcing the Al layer 12 of the second layer, even if there exist a positional displacement to some extent, the Ti-W film 11 prevents the Al film 10 of the first layer from being etched. |
