发明名称 PATTERN MACHINING METHOD
摘要 <p>PURPOSE:To apply additional correction to the mask pattern, by applying a separating film such as vinyl acetate instead of a resist film, providing a window at the additional patterning position, thereafter applying a Cr film, separating the film, and removing the unnecessary Cr film. CONSTITUTION:The mask pattern of Cr2 is provided on a glass plate 1. First of all, the vinyl acetate series separating film 11 is applied to the thickness of about 100mum. Nd-Ar laser is irradiated to the additional patterning position, and the window is selectively provided only in the film. Then the Cr film 5 with the thickness of about 800Angstrom is evaporated, and the film 11 is separated. Thus the device is completed. In this constitution, a dissolving process of using alkali solution is not required in removing the Cr film, and the pattern can be simply corrected.</p>
申请公布号 JPS57207337(A) 申请公布日期 1982.12.20
申请号 JP19810092452 申请日期 1981.06.16
申请人 FUJITSU KK 发明人 MORISHIGE AKIRA
分类号 G03F1/00;G03F1/72;H01L21/027 主分类号 G03F1/00
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