| 摘要 |
PURPOSE:To obtain an MOS type FET having high reliability through few processes by depositing a silicide and plycrystal Si containing an impurity onto a semiconductor substrate, diffusing the impurity through heat treatment, forming source and drain regions and using the silicide and the polycrystal Si left as electrode wiring. CONSTITUTION:A thick field oxide film 22 is shaped to the peripheral section of a P type Si substrate 21, the surface of the substrate 21 surrounded by the film 22 is coated with a thin gate oxide film 23, and openings are bored to source and gate forming regions. The polycrystal Si film 24 containing P and the Mo silicide film 25 are laminated and shaped onto the whole surface containing the films 22, 23, the mask of resist films 26 according to a predetermined pattern are formed, and the films 25 of sections exposed are removed through etching. The thickness of the films 24 exposed between a gate electrode section 25' and source and drain layer sections 25'' is thinned through etching, the films 26 are removed, the P in the films 26 is diffused through heat treatment, the N type source and drain regions 26 are shaped, and the remaining sections 25', 25'' are each used as the electrode wiring. |
