发明名称 BALL BONDING WIRE FOR SEMICONDUCTOR ELEMENT
摘要 PURPOSE:To prevent breakage during ball formation by heat treating a bonding wire at a temperature higher than the recystallization temperature. CONSTITUTION:A bonding wire 1 is heat treated beforehand at a temperature higher than the recrystallization temperature so that the changes in crystal grains, tensile strength, hardness and elongation are almost settled and they have been made uniform when a ball 4 is formed. Therefore even if a strain is generated after the bonding, the strain amount is absorbed by the whole of the bonding wire 1 so that there will be no large tension, and breakage will be prevented.
申请公布号 JPH0374851(A) 申请公布日期 1991.03.29
申请号 JP19890211160 申请日期 1989.08.16
申请人 TANAKA KIKINZOKU KOGYO KK 发明人 YAMAMOTO TAIYO;MUKOYAMA KOICHIRO
分类号 H01L21/60 主分类号 H01L21/60
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