| 摘要 |
PURPOSE:To facilitate the charging electric load reducing the write, erase voltage by a method wherein the first Si3N4 film is formed on the Si substrate surface and the second Si3N4 film is formed so that a part of the first Si3N4 film may be converted into the Si3N4 film to be coated with the second Si3N4 film. CONSTITUTION:The regions 12, 13 to be the source.drain regions of MNOS transistor are formed on the Si substrate 11. Firstly the part to be the channel region of said transistor is high temperature treated by a gas containing N and the Si surface is thermal nitrified to form the Si3N4. Then the resultant Si3N4 film surface is high temperature oxidized to convert the surface of said film 14 into the SiO2 film 15. Secondly said film 15 is completely coated with the Second Si3N4 film 16. Thus the insulating films 14 and 15 to be the electric load charging channel of MNOS and the Si3N4 film 16 to store the electric load are formed. Consequently the electric load may be easily charged without reducing the holding time capacitating to reduce the write.erase voltage. |
