MOS TYPE READ ONLY MEMORY DEVICE

摘要

PURPOSE:To stock information without changes in the capacity component of a read only charge and discharge line by a method wherein the shapes of the gate regions composing an MOS transistor between two impurity diffused regions are different from each other. CONSTITUTION:Gate regions 4 and 5 are formed for the formation of an MOS transistor between an impurity diffused region 1 to be connected to a power cable and an impurity diffused region 2 to be connected to a common line for charging and discharging. The gate regions 4 and 5 are provided with grooves respectively d1 and d2 deep. The supply of electricity from the MOS transistor including the gate region 4 and the impurity diffused regions 1 and 2 is different from that coming from an MOS transistor incorporating the gate region 5 instead of the gate region 4. The electrical difference results in an information difference.