| 摘要 |
PURPOSE:To shorten the working time by forming the multiple layers of compound semiconductors having the different constituents by one operation. CONSTITUTION:A concave part 2 is provided at the central part of an ample 1. A nondoped CdTe substrate 4 is accommodated in the concave part 2. Two kinds of melted raw material liquids 5 and 6 (a melted raw material liquid of nondoped HgCdTe 5 is a melted raw material liquid for addition for growing a P type HgCdTe layer and a melted raw material liquid HgCdTe including In 6 is a melted raw material liquid for addition for growing an N type HgCdTe layer) are accommodated at both end parts of the ample 1. The temperature of said epitaxial growing system is controlled. At first, the ample 1 is inclined so that the right end is high and the left end is low, and the liquid 5 is guided to the substrate 4. Then the ample is returned to the horizontal attitude, the epitaxial growing is performed so as to form the required thickness of the P type epitaxial layer. Then the ample 1 is inclined to the reverse direction with respect to the previous direction, and the liquid 6 is added to the liquid 5 that is guided on the substrate 4. When the first and second HgCdTe layers are grown to the desired thickness, the melted raw material liquids are removed, and the epitaxial growth is stopped. |
