| 摘要 |
PURPOSE:To form the highly integrated mask ROM by a method wherein one wiring group connected to the I<2>L output and the other wiring group intersecting with each other through the intermediary of the insulating film are provided to be connected with each other at the selected intersection. CONSTITUTION:An I<2>L is formed on a p type substrate 1. The constituents of the said I<2>L are n<+> type emitter 2, p type base 5, n-p-n transistor comprising n<+> type collectors 6a-6b and p type injector 3, n type base 4 and p-n-p injector comprising p type collector 5. The wirings 8a-8n formed on said substrate 1 through the intermediary of SiO<2> film 7 are respectively connected to the collectors 6a-6n through the intermediary of the contact hole. The wiring 9a constituting the bit line is formed on the wiring 8a-8n through the intermediary of SiO2 film 7b so that the wiring 9a may be perpendicular to the wiring 8a-8n. The word line and the bit line can be connected to each other by means of forming a contact hole on the SiO2 film 7b. |
