| 摘要 |
PURPOSE:To form a diffusion layer at low cost, with excellent uniformity and low defect using a conventional diffusion apparatus, by a method wherein diffusion of unsaturated type is performed using diffusion source comprising a glass layer including impurity formed by thermal diffusion. CONSTITUTION:A thermal oxidation film 7 is formed on a semiconductor substrate 6, and area for diffusion is removed at 8 by etching. The assembly is entered ina thermal diffusion reaction tube and B2H6 gas and O2 gas are injected, thereby BSG layer 16 is formed and the substrate 6 at a window 8 is diffused into thin B-layer. Inert gas such as N2 is injected in the reaction tube and the temperature is raised, thereby inpurity is diffused from the BSG layer 16 to the substrate and a layer 19 is formed. The temperature in the reaction tube is decreased gradually and the substrate 6 is taken out. |
