| 摘要 |
According to the humidity censor structure, (1)is a valve function metal like tantalum, aluminium, titanium. A dielectric anode oxidation film is formed on the metal gas(1) and a semiconductive metal oxide film like a MO2 is formed on the layer(2), (4) is noncontacting vacancy. (5) is contacting. (6) is a dielectric contact. When the upper structure is obtained, jumidity censor of capacitance change type which is represented to (C98-C31) / C8=CX has a range CX>0.01. a capacitance C98 represents jumidity 98 precent, C31 is humidity 31 percent.
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