| 摘要 |
<p>A gate turn-off thyristor is disclosed, which comprises semiconductor substrate (1) in which a cathode emitter layer (5), a first base layer (4), a second base layer (3), and an anode emitter layer (2) are formed in this order such that pn junctions are made between respective adjacent ones of the layers. The cathode emitter layer (5) are divided into portions each of which is exposed at one of the main surfaces of the semiconductor substrate (1), the anode emitter layer (2) is exposed to the other main surface thereof, each of the separated cathode emitter layer portions (5) is made in low resistance contact with an anode electrode (7) and the second base layer (3) has a thickness WnB [ mu m] determined by the condition: WnB >/= 3.817 x 10<-><1>.VBO - 2.550 x 10<-><4>.VBO<2> + 1.133 x 10<-><7>.VBO<3> - 2.000 x 10<-><1><1>.VBO<4> or WnB >/= 3.200 x 10<-><1>.VBO where VBO [V] is a breakover voltage.</p> |
