发明名称 |
V-MOS Device with self-aligned multiple electrodes |
摘要 |
High density VMOSFET devices, particularly single transistor memory cells, are provided by use of a series of simplified self-aligning process steps. Gate electrodes, source/drain regions and source/drain contacts are provided with the aid of an initial mask-less photoresist removal process in which a relatively thick layer of self-leveling photoresist is uniformly removed in order to define portions of a gate electrode within the recess of a V-groove. The gate electrode subsequently acts as a self-aligned mask to define implanted source/drain regions also within the V-groove and to enable second level interconnecting metallurgy contacts to be formed along the sidewalls of the V-groove.
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申请公布号 |
US4364074(A) |
申请公布日期 |
1982.12.14 |
申请号 |
US19800158668 |
申请日期 |
1980.06.12 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
GARNACHE, RICHARD R.;KENNEY, DONALD M.;THOMA, NANDOR G. |
分类号 |
H01L21/28;H01L21/768;H01L21/8242;H01L27/10;H01L27/108;H01L29/423;H01L29/78;(IPC1-7):H01L29/78 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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