| 摘要 |
PURPOSE:To enhance the degree of integration and to enhance reliability of a semiconductor device when a multilayer metal wiring is to be formed by a method wherein a polycrystalline silicon layer is interposed between the lower layer and upper layer metal wirings. CONSTITUTION:A field oxide film 102 of about 1.0mum thickness is made to grow on the inactive region of a P type Si substrate 101, and the Al film 103 of about 1.0mum thickness is adhered thereon according to the sputtering method. Then the polycrystalline Si film 104 is adhered thereon in succession making thickness thereof to about 0.1mum in the same sputtering device, and the first layer Al wiring electrode 105 consisting of the film 103 is formed according to the photo etching method. After then, an oxide film 106 is made to grow to about 1.5mum thickness thereon according to the CVD method, an opening 107 is formed, and the second layer Al wiring electrode 108 of about 1.0mum thickness is adhered thereon according to the electron beam evaporation method. Accordingly there exists no time for generation of an oxide film which is the cause of inferiority of contact on the film 103 to constitute the first layer wiring electrode, and contact to the second layer wiring electrode becomes favorable. |
