发明名称 DEVELOPING METHOD FOR PHOTOSENSITIVE RESIST
摘要 PURPOSE:To stably form a fine resist pattern with high reproducibility by exposing a semiconductor substrate coated with a photosensitive resist through a prescribed pattern, immersing the exposed substrate in a developing soln., and developing it while applying ultrasonic waves. CONSTITUTION:A semiconductor substrate 10 coated with a photosensitive resist is exposed through a prescribed pattern. The exposed substrate 10 is attached to a carrier 11 and immersed in a developing soln. 16 in a container 12 put in an ultrasonic vibrating vessel 13 filled with water 14, and while applying ultrasonic waves to the vibrating part 15 from a power source 17 for the vibrating part, development is carried out. Gas generated during the reaction of the resist with the developing soln. is removed from the resist surface by the applied ultrasonic waves in a short time, and a thin degenerated layer of the resist is separated from the substrate surface. Accordingly, deficient development is prevented, and a fine resist pattern is stably obtd.
申请公布号 JPS57202538(A) 申请公布日期 1982.12.11
申请号 JP19810088395 申请日期 1981.06.09
申请人 MATSUSHITA DENKI SANGYO KK 发明人 ISHIKAWA OSAMU;EZAKI TAKEYA;KUBOTA MASABUMI;KAJIWARA KOUSEI
分类号 H01L21/30;G03F7/30;H01L21/027 主分类号 H01L21/30
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