| 摘要 |
PURPOSE:To obtain a shallow junction by low-temperature treatment by a method wherein a semiconductor substrate exposed a part of the substrate is placed in the gas plasma of a desired impurity and local voltage drop or voltage rise is selfishly formed on the substrate and the formation of a high-density impurity layers is performed. CONSTITUTION:A single crystal Si substrate 1 having openings at an insulating layer on the surface of the substrate is accommodated in an enclosed container 2 induced gas having the component of a vacuum and required impurity and is held on a stand 3 for heating at about 500 deg.C. The stand 3 can be grounded or insulated from the outside. The substrate 1 is negatively charged by operating a filament 4 mounted on a tank. The impurity under plasma condition generated between high-frequency electrodes 5, 6 cancels the charged condition of the substrate and deposited on the substrate as well. The impurity is simultaneously aimed by laser 7 from the outside and is reacted and diffused at the surface. In this composition, very shallow and high-density impurity layers can be obtained at desired opening sections only and no defects are provided in the substrate to eliminate heat treatment for recovery and a shallow junction can easily be obtained. |
