| 摘要 |
PURPOSE:To acquire a clean and stable oxide film with good reproductivity, by heat-treating after implanting an SiO2 film on an si substrate with halogenous ions. CONSTITUTION:An SiO2 film on an Si substrate is implanted with halogenous ions like <35>Cl<+>, <30>Br<+> and <19>F<+> or particle ions including halogenous elements to set ion quantity in SiO2 as much as 10<11>-10<14>/cm<2>. Next, treating at the temperature range of 500-1,200 degrees C, an electrically active surface level existing on the Si-SiO2 boundary is cancelled, a clean oxide film can be formed with reproductivity. This brings a stable MOS device. |
