| 摘要 |
PURPOSE:To obtain the substrate suitable for the IC by a method wherein an amorphous silicon layer is deposited on the substrate with the insulating surface, mask is covered on the above, and after the exposed silicon layer has been converted to an oxide layer by performing heat treatment, the silicon layer surrounded by the oxide layer is single-crystallized. CONSTITUTION:An amorphous layer 4 is deposited on the substrate 2 with the insulating surface 1, an island-shaped mask layer 5 consisting of the layer 4 which is located under the layer 5 alone is left over by performing heat treatment in a wet oxygenous atmosphere at the temperature of 1,000 deg.C or thereabouts, and the layer 4 surrounding the layer 6 is converted to an SiO2 layer 7. Then, the mask 5 is removed, and the layer 6 is converted to a single-crystal layer 8 by performing heat treatment at 1,200-1,350 deg.C or by irradiating an argon laser beam on the layer 6. Subsequently, the surface part of the layer 7 which is cubically expanded by a wet etching is removed, its surface is made even with that of the layer 8, and then the desired substrate for IC, consisting of the single-crystal layer 8 and surrounding the layer 7, is obtained. |
