| 摘要 |
PURPOSE:To establish an insulation film on a semiconductor substrate, by arranging the semiconductor substrate in gas atmosphere of proper pressure, irradiating an energized beam on the substrate, and heating the substrate by gas plasma. CONSTITUTION:An Si substrate is placed in N2 or gas including N2, or NH3 or gas including NH3, and irradiated by laser. A boundary between the substrate and plasma is extremely chemically active. Activated nitrogen causes a reaction directly to the si substrate. An insulation film Si3N4 is formed selectively. The Si3N4 formed under constant gas atmosphere depends only on a laser power. An even film can be formed with good reproductivity. Beam scan permits the formation at any region. |
