| 摘要 |
PURPOSE:To contrive the extension of the life of a carrier by a method wherein the unpaired coupler in a non-single crystal semiconductor which is easy for abundant production is coupled by adding hydrogen or heavy hydrogen. CONSTITUTION:SiH4 and SiH2Cl2 are used as reactive gas and 10<18>-10<21>cm<-3> of PH3, AsH3 is mixed and 10<15>-5X10<20>cm<-3> of H2O as O2, NH3 as N2 or the like are added to adjust forbidden band width. Furthermore, H2(D2) or HCl or the like is induced. Si1H can be maintained with small high-frequency energy by maintaining the inside of a reactive chamber at 0.1-10 Torrs and by jointly using high-frequency heating 5 and resistance heating 6. Si-H bind is formed and neutralized by mixing and adding H to poly crystal having crystallization with the amorphousness of a generated Si principal component or short range order or polycrystal Si, especially internal Si. As H has a small atom radius, the H is mixed to an Si film and can be added to the Si film at the range satisfying with the balance condition of solid vapor. An H2 molecule will not contribute to neutralization. In this way, the life of a carrier can be improved up to 10<-4>-10<-2>cm<3>/V. |
