发明名称 DRIVING METHOD OF SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To stabilize write and erase operations of information, by detecting a variation of voltage applied to a gate electrode, and setting each write and erase time against each varied applied voltage. CONSTITUTION:In case of writing and erasing information to a storage device 3, each write and erase time is varied by the quantity corresponding to the quantity of a variation of supply voltage, by detecting the voltage of an electric power supply 1 by a supply voltage detecting circuit 4, and applying a difference against reference voltage, to a storage device driving circuit 2, and as a result, the storage device 3 is driven so that threshold voltage in a write state and an erase state of the storage device is always constant irrespective of a variation of write voltage and erase voltage.</p>
申请公布号 JPS57200994(A) 申请公布日期 1982.12.09
申请号 JP19810086198 申请日期 1981.06.04
申请人 NIPPON DENKI KK 发明人 SATOU NOBORU
分类号 G11C17/00;G11C16/02;G11C16/10 主分类号 G11C17/00
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