| 摘要 |
<p>PURPOSE:To improve the static electricity resistance characteristic of a semiconductor device and to enhance the reliability of the device by connecting the side of the vicinity of at least a pad of a diffused region to a thin polycrystalline silicon film. CONSTITUTION:The pad 1 is connected through a thin metal film wire 2 to a thin polycrystalline silicon film resistor, and is further connected to a diffused region 4 having reverse conductive type to the substrate through a connecting part 5. The connecting part 5 of the side in the vicinity of the pad 1 of the region 4 connected initially from the pad 1 is connected to the polycrystalline silicon film. The single crystal silicon of the substrate and the polycrystalline silicon of the part 5 are, though they are different between the single crystal and the polycrystalline, the same silicon, are molten at a temperature of approx. several hundred degree C and are no longer facilitated to punch through the diffused layer. Accordingly, statc electricity characteristic of the device can be improved.</p> |
