| 摘要 |
PURPOSE:To increase the density and capacity of a semiconductor memory cell having first FET, second FET, writing line, reading line and word line by injecting the same impurity to the vicinity of the surfaces of both gate regions of the first and second FETs. CONSTITUTION:A P channel first MOSFET has first energizing electrode 51, a low resistance diffused layer 61 operating also as a writing line WW', gates 52, 62, and a substrate 63. An N channel second MOSFET has first energizing electrode 54, a diffused layer 64 of reading line RR', gates 55, 65, and P type diffused layers 56, 66. To control the threshold voltages of the two FETs, an impurity layer 71 is formed. The P type diffused layers 56, 66 and the layer 71 are inplanted with the same boron ions. In this manner, high density and large capacity can be provided. |
