发明名称 SEMICONDUCTOR ELEMENT
摘要 PURPOSE:To readily obtain a leadless type electrode by disposing a semiconductor blank on the end face having small diameter confronting both electrodes having small-diameter parts and large-diameter parts made of Dumet wire, and intimately contacting a glass tube with the side surface of the small-diameter parts of both the electrodes and sealing the tube. CONSTITUTION:A Dumet wire having preferable formability is used to form a T-shaped electrode 3 having a large-diameter part 31 and a small-diameter part 32. Since a copper layer 6 covered in case of cutting the Dumet wire coats the cut surface, both the ends faces 34, 35 of the electrode 3 are covered with copper layers. The small-diameter parts of the two electrodes 3 are confronted, a semiconductor element 1 is interposed between the electrdes 3, and a glass tube 4 is intimately contacted at the side surface of the small-diameter part and is sealed. In this manner, the lead-less electrodes can be readily formed.
申请公布号 JPS57201059(A) 申请公布日期 1982.12.09
申请号 JP19810085502 申请日期 1981.06.03
申请人 FUJI DENKI SEIZO KK 发明人 YAMADA YASUO
分类号 H01L23/08;H01L23/051;H01L23/48 主分类号 H01L23/08
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