| 摘要 |
PURPOSE:To reduce the steps of opening contacting holes and to perform high integration of a multilayer wiring structure by connecting an electrode to be connected with a wire at the side face of a wiring layer interposed between insulating layers through a contacting hole. CONSTITUTION:A diffused layer 12 to become the first wiring layer is formed on a silicon substrate 11. The first and second insulating layers 13, 15 and second and third wiring layers 14, 16 are formed on the substrate 11. The layers 12, 14, 16 are connected via wire through a contacting hole in such a manner that the layer 16 is connected to the side face of the layer 14 and to the layer 12, thereby connecting mutually each other. |
