| 摘要 |
PURPOSE:To correctly test a semiconductor device by simultaneously applying the same voltage to the corresponding electrodes of a semiconductor to be tested and a plurality of adjacent semiconductor devices. CONSTITUTION:Many semiconductor devices 4 are formed on a semiconductor wafer 3. Measuring probe groups 1, 2 are contacted deeply with the electrode of a semiconductor device A to be tested, an a test is performed. The electrode (a) of the semiconductor devices is contacted with a probe 1 at the electrode electrically conducted with the substrate of semiconductor. The probe 1' is also contacted with the electrode (a') corresponding to the electrode (a) of the semiconductor device B1 adjacent to the device A, and the same voltage is simultaneously applied through probes 1, 1' to the electrodes (a) and (a'). This is similarly performed to the semiconductor devices B2-B6. In this manner, the voltage of the substrate of the device A becomes nearly equal since the same voltage is applied from the environment, thereby correcting testing the devices. |
