| 摘要 |
PURPOSE:To acquire a subsurfaced constant-voltage diode of low votlage, by providing a conductive third region to contact with a first region and to have first and second regions different in depth. CONSTITUTION:P type regions 2, 3 are formed on an N type semiconductor layer 1. Next, a deep N type region 14 is formed to take out electrodes. A very shallow N type region 4 is formed afterwards. Electrodes are taken out of the regions 3, 14 to make an anode and a cathode respectively. This brings a constant-voltage diode without a defect like shortcircuit, becuase the deep N type region 14 is provided to protect against shortcircuit at the time of electrode 6 formation and the region 4 is made shallower to a limit as a P-N jujction to determine constant voltage. There is no increase in manufacturing processes, if the region 14 is made at the same time with emitter diffusion. Exchanged the above-mentioned P type with the N type, the same can be obtained. |
