| 摘要 |
PURPOSE:To obtain a semiconductor device which can remorkably raise the integration by forming an emitter by a self-aligning method and forming two-layer wiring structue of a wire of a lead from the electrode and a wire of second metal. CONSTITUTION:After an oxidized film is isolated, boron ions are injected to form a base 9, emitter 11 and collector electrode lead 12 are than allowed to remain, and a mitrided film 5 and an oxidized film 4 are removed. After it is dipped in thermal phosphoric acid and aqueous fluoric aicd solutions, a polysilicon is doped on th overall surface, unnecessary polycilicon is then etched, and a shallow N<+> type diffused layer emitter 18 is formed in a P type semiconductor layer 9 forming a base. Further, an interlayer insulating film 19 is covered, aluminum is deposited, is photoetched, and an aluminum lead 20 of second metallic wiring layer is provided in a two-layer wiring structure. |
