| 摘要 |
PURPOSE:To enhance the performance of an IC by stably forming a large uniform single crystal silicon layer on an insulating film coated on a silicon substrate. CONSTITUTION:An insulating film 23 is formed on part of a silicon substrate 22, the first polycrystalline silicon layer 21 is selectively formed, a layer 24 is formed by a CVD method (a polycrysalline layer on the layer 23, and a single crystal layer on the layer except the layer 23), and the polycrystalline region of the layer 24 is converted into single crystal by emitting energy beam such as a laser or an electron beam. |
